AP60x Product Series
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Related Features |
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The AP60x product series has been developed to meet the requirements of the next-generation communication infrastructure systems. The products are targeted at the pre-driver and driver stage in wireless infrastructure equipment such as cellular basestations, PA boards and repeaters. These products are designed to meet the requirements for high linearity and high efficiency in a typical power amplifier line-up.
WJ has developed a 28V InGaP HBT (GaAs) process technology that is able to match and exceed the performance of current LDMOS solutions. This process technology is compatible with the MMIC approach and offers other advantages such as high linearity and efficiency, and lower operating/quiescent currents. The AP601, AP602, and AP603 are high dynamic range power amplifiers housed in a small surface mount plastic package. These single stage amplifiers are fabricated using the +28V InGaP HBT (GaAs) porocess technology. The AP601, AP602, and AP603 operate over a wide frequency range of 800 MHz to 2200 MHz and achieve high performance with compressed 1dB power of 32.5dBm, 36dBm and 38dBm, respectively. These devices also operate over a wide supply voltage range of 24V to 32V.
The Ap60x product family incorporate WJ's patent pending bias circuitry to compensate for variations in linearity and current draw over temperature. A negative bias voltage is not required because an internal active bias enables the AP60x devices to operate directly of a single high voltage supply. An added feature enables the quiescent bias to be adjusted externally to meet system requirements.
The AP60x series are housed in a low profile 5mm x 6mm x 1mm 14-lead DFN package and is RoHS-compliant and lead-free. The standard SMT manufacturing process is used for packaging where no manual assembly is involved. The DFN14 package has an exposed ground pad to dissipate heat to the PCB substrate.
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Advantages
Applications
Technical Publication
Press Release
Product Brochure
Product Pages
AP601
AP602
AP603
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Fig. Functional Diagram of AP60x in DFN14 Package
Why AP60x Power Amplifiers
- Lower Amplifier Distortion
- Reduced Power Dissipation
- Reduced Packaging Complexity
- Reduced Heat-Sinking, Less Cooling required
- Smaller Circuit Boards
- High Reliability
- Lower Total Cost of Ownership
AP60x Key Advantages
- Real advantages in ACPR/ACLR and efficiency over LDMOS Rev 6
- Surface mountable packaging for ease of assembly and mechanical simplicity
- Total solution cost advantages compared to conventional LDMOS solutions <10W
- Roadmap to higher power levels with similar performance advantages
| +28V InGaP HBT Power Amplifiers |
Part
No. |
Freq
(MHz) |
Modulation |
Avg.
Pout
(dBm) |
Power
Gain
(dB) |
P1dB
(dBm) |
ACLR*
(dBc) |
Eff
(%) |
IMD3**
(dBc) |
Supply
Voltage
(V) |
Icq
(mA) |
Package |
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940 |
W-CDMA |
+24 |
15.8 |
+32.5 |
-50 |
17 |
-54 |
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| AP601 |
1960 |
W-CDMA |
+24 |
15.0 |
+32.7 |
-49 |
17 |
-62 |
+28 |
40 |
DFN14 5x6mm |
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2140 |
W-CDMA |
+24 |
13.5 |
+32.5 |
-51 |
17 |
-57 |
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940 |
W-CDMA |
+27 |
15.5 |
+35.7 |
-47 |
17 |
-62 |
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| AP602 |
1960 |
W-CDMA |
+27 |
14.5 |
+35.5 |
-50 |
17 |
-51 |
+28 |
80 |
DFN14 5x6mm |
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2140 |
W-CDMA |
+27 |
13.0 |
+35.7 |
-52 |
15.7
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-47 |
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940 |
W-CDMA |
+30 |
17.0 |
+38.5 |
-52 |
16.6 |
-63 |
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| AP603 |
1960 |
W-CDMA |
+30 |
12.0 |
+38.5 |
-49 |
14 |
-52 |
+28 |
160 |
DFN14 5x6mm |
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2140 |
W-CDMA |
+30 |
11.8 |
+38.2 |
-50 |
14.6 |
-51 |
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* WCDMA 3GPP Test Model 1+32DPCH, 65% clipping, 8.6 dB PAR @ 0.01% probability.
** Characterized at the PEP of +24, +27, and +30 dBm for the AP601, AP602, and AP603 respectively.