GaAs HFETs

WJ’s FP product family of GaAs hetero-structure-FET (HFET) devices is high efficiency, high power, high gain and high quality amplifiers that are ideal for driver stage applications in wireless infrastructure equipment. These high reliability products achieve 0.5W to 2W of P1dB power and housed in a small form factor SOT-89 and 28-lead QFN packages to optimize thermal efficiency. The FP amplifiers are highly efficient to reduce current consumption that translates into less power dissipated and lower energy costs for end customers. Similar to the FH family of products, the FP products can also be used for CATV applications.

Advantages

High Efficiency to Minimize Current Consumption and Power Dissipated
High Gain
High Output IP3 Performance
MTTF Values > 100 years @ 85°C
Able to Operate over a Wide Frequency Range and can Address both Narrow and Broadband Applications

Features

50 – 4000MHz
High Drain Efficiency
High Output IP3
Lead-free/RoHS Compliant/Green Packages

Applications

Wireless Infrastructure Equipment
CATV / DBS
WLAN, ISM
Defense and Homeland Security